Electrical Engineering Material
Course objectives:
To provide a basic understanding of the different materials used in electrical and electronics engineering.
- Theory of Metals(8 hours)
- Elementary Quantum mechanical ideas: Wave Particle Duality, Wave function, schrodinger’s equation, operator notation, expected value
- Infinite Potential Well: A confined electron.
- Finite Potential Barrier: Tunneling Phenomenon
- Free electron theory of metals: Electron in a linear solid, Fermi energy, Degenerate states, Number of States, Density of States, Population Density
- Fermi-Dirac Distribution Function
- Thermionic Emission: Richardson’s Equation, Schottky Effect
- Contact Potential: Fermi level at Equilibrium
- Free Electron Theory of Conduction in metal(6 hours)
- Crystalline structure: Simple cubic structure, Body centered cubic, Face centered cubic
- Band Theory of Solids
- Effective mass of Electron
- Thermal Velocity of Electron at equilibrium
- Electron mobility, conductivity and resistivity
- Dielectric materials(6 hours)
- Matter polarization and Relative permittivity: Relative permittivity, Dipole moment, Polarization vector, Local field, Clausius-Mossotti equation
- Types of Polarization: Electronic polarization, Ionic polarization, Orientational polarization, Interfacial polarization
- Dielectric losses: Frequency dependence
- Dielectric breakdown in solids
- Ferro-electricity and Piezoelectricity
- Magnetic Materials(6 hours)
- Magnetic material classification: Diamagnetism, Paramagnetism, Ferromagnetism, Anti-ferromagnetism, Ferrimagnetism
- Magnetic Domains: Domain structure, Domain Wall motion, Hysteresis loop, Eddy current losses, Demagnetization
- Soft magnetic materials: Examples and uses
- Hard magnetic materials: Examples and uses
- Superconductivity(5 hours)
- Zero Resistance and the Meissner effect
- Type I and Type II superconductors
- Critical current density
- Semiconductors(14 hours)
- Intrinsic semiconductors: Silicon crystal, Energy band diagram, Conduction in semiconductors, Electrons and Hole concentration
- Extrinsic semiconductors: n-type doping, p-type doping, compensation doping
- Introduction to GaAs semiconductor
- Temperature dependence of Conductivity: Carrier concentration temperature dependence, Drift mobility temperature and Impurity dependence, Conductivity temperature dependence, Degenerate and non-degenerate semiconductors
- Diffusion on semiconductor: Einstein's Relationship
- Direct and indirect generation and recombination
- Pn junction: Forward biased, reverse biased pn-junction.
References:
- Bhadra Prasad Pokharel and Nava Raj Karki,"Electrical Engineering Materials",Sigma offset Press,Kamaladi, Kathmandu, Nepal,2004.
- R.C. Jaeger,”Introduction to Microelectronic Fabrication- Volume IV”, Addison Wesley publishing Company,Inc., 1988.
- Kasap.S.O, Principles of electrical engineering materials and devices, McGraw Hill, NewYork,2000.
- R.A.Colcaser and S.Diehl-Nagle,”Materials and Devices for Electrical Engineers and Physicists,McGraw-Hill, New York, 1985.
Evaluation Scheme:
The questions will cover all the chapters of the syllabus. The evaluation scheme will be as indicated in the table below
Chapters |
Hours |
Marks distribution* |
Theory |
Numerical |
1 |
8 |
12 |
8 |
4 |
2 |
6 |
10 |
6 |
4 |
3 |
6 |
10 |
10 |
X |
4 |
6 |
10 |
10 |
X |
5 |
5 |
8 |
8 |
X |
6 |
14 |
30 |
18 |
12 |
Total |
45 |
80 |
60 |
20 |
*Note: There may be a minor deviation in marks distribution
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